| 摘要 |
PURPOSE:To simplify the process and to eliminate the deviation of mask alignment by reducing a PEP process by one time in manufacture of a composite IC such as CMOS-SAMOS. CONSTITUTION:Three layers of an oxide film 9, a polycrystalline Si film 10 and an oxide film 11 are obtained by providing a resist mask on a gate scheduled region of an SAMOS and by selectively etching it. Then a mask for forming a gate of an N channel of a CMOS and a mask for covering a P channel region are formed, and a polycrystalline Si film 8 is etched. And then As is subjected to ion injection to form source-drain regions 16-19, and the N channel of a CMOS2 and an SAMOS3 are obtained. Also about a P channel MOS, a resist 31 for formin a gate and an N-MOS coated mask 20 are formed, and with etching a gate electrode is obtained. Further, the mask is kept as it is, and within an N well 5 boron is subjected to ion injection, thereby allowing a source-drain region to be formed. |
