发明名称 PROCESSO DE FABRICAR UMA LIGA AMORFA FOTOSENSIVEL, A RESPECTIVA LIGA E DISPOSITIVO FOTOSENSIVEL
摘要 <p>A graded bandgap material comprises amorphous Si containing F(a- Si : F) together with a varying amount of a bandgap modifier (e.g. Ge, Sn, C or N). H, may also be incorporated in the material which may be doped. The graded bandgap material may be used in Schottky, MIS and PIN solar cells or in photoconductive or electrophotographic devices.</p>
申请公布号 BR8105747(A) 申请公布日期 1982.05.25
申请号 BR19818105747 申请日期 1981.09.08
申请人 ENERGY CONVERSION DEVICES INC 发明人 OVSHINSKY S;ADLER D
分类号 H01L31/04;C23C14/00;C23C14/06;C23C14/32;C23C16/22;C23C16/44;C23C16/455;H01L29/16;H01L31/20;(IPC1-7):H01L31/18 主分类号 H01L31/04
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