| 摘要 |
PURPOSE:To be adapted for the operation in a microwave for a field effect transistor formed with a P type first semiconductor layer and an N type second semiconductor layer on a high resistance substrate and a Schottky gate on the second layer by reducing the electron affinity of the second layer smaller than that of the first layer. CONSTITUTION:A P type GaAs first semiconductor layer 32 of approx. 1X10<15>/ cm<3> of effective acceptor density is grown on a semi-insulating GaAs substrate 31, and N type Ga0.7Al0.3As second semiconductor layer 34 having approx. 0.4eV of electron affinity of the difference between the free electron energy level in vacuum and the electron energy level of the conductive band than the GaAs is laminated on the layer 32. Subsequently, the layer 34 is formed in the predetermined pattern, a gate electrode 34 is mounted thereon, N or N<+> type region 37, 38 for reducing the contact resistance are respectively formed on the surface of the layer 32 disposed at each of both sides of the layer 34, and the source and drain electrodes 35, 36 are mounted. Thus, the layer 33 under the electrode 34 is all depleted. |
