| 摘要 |
PURPOSE:To eliminate the crack at a passivation film in a semiconductor device by reducing the size of a hole of a spacer resist for lifting off smaller than the size of a hole of the passivation film. CONSTITUTION:An aluminum wire 2 is formed on a wafer 1 completed at the diffusing and oxidizing steps, etc, and a passivation film (PV film) 3 is formed thereon. The side of the hole 4a of a spacer resist 4 for lifting off is formed smaller than that of the hole 3a of the PV film 3 in such a manner that a various metal 5 is not accumulated directly on the film 3 over the entire surface. A part of the spacer resist 4 interposed between the hole of the plated resist 6 and the hole 4a of the spacer resist is not exfolidated but is remained, and the aluminum pad 2 in the vicinity of the hole 3a of the film 3 is external shielded. In this manner, it can eliminate the crack at the PV film and the introduction of water thereto and the corrosion thereof. |
