发明名称 |
Read-only storage using enhancement-mode, depletion-mode or omitted gate field-effect transistors |
摘要 |
Read-only storage chip stores three levels per single-FET cell by providing each cell with an enhancement gate, a depletion gate or no gate connection. Level decoders convert pairs of these three-level signals to triplets of two-level data signals for binary output from the ROS.
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申请公布号 |
US4327424(A) |
申请公布日期 |
1982.04.27 |
申请号 |
US19800169542 |
申请日期 |
1980.07.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WU, PHILIP T. |
分类号 |
G11C17/00;G11C11/56;G11C16/04;G11C17/12;G11C17/18;(IPC1-7):G11C17/00;G11C11/40 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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