| 摘要 |
PURPOSE:To enhance the precision of pattern formation of a semiconductor device by a method wherein the first mask layer to prescribe the pattern of insulating regions to be provided on a semiconductor layer and the second mask layer to prescribe the pattern of impurity implanting regions are decided by the same process. CONSTITUTION:An SiO2 film 4, an Si3N4 layer 5, an SiO2 film 6 and an Si3N4 film 7 are laminated in order on an Si substrate 1 having the epitaxial layer 3, openings 13, 14 for formation of impurity regions are formed in the Si3N4 film 7 using a resist layer, and at the same time, the films 4-6 are etched to be removed utilizing the outside circumference of the Si3N4 film 7 using the second resist layer, and the exposed substrate parts are oxidized selectively. Accordingly the respective regions can be formed by self-alignment having favorable precision, and integration is enabled to enhance. |
