| 摘要 |
PURPOSE:To avoid occurrence of cutting of Al wiring in subsequent processes, by removing the protruded part of an Si nitride film yielded in providing a hole in etching of a multi-layered film, by plasma etching. CONSTITUTION:An Si oxide film 22 and the Si nitride film 23 are formed on an Si substrate 21, and a double layered film is constituted. A resist mask 24 is formed on said double layered film. Thereafter film 23 is etched by plasma etching. Then the film 22 is etched with the thickness of several hundred Angstrom being remained. The film 22 is overetched, and the film 23 is protruded in a eaves shape and exposed. Then, the plasma etching is performed again on the protruded film 23, and the eaves shaped protruded part 23a is removed. Then, by heating the substrate 21, a resist 25 which is protruded in an eaves shape is flowed. Said flowed resist 25 and the film 22 are closely contacted. Thereafter, the film 22 remained on the substrate 21 is completely etched, and the surface of the substrate 21 is exposed. |
