发明名称 SEMICONDUCTOR DEVICES AND THEIR MANUFACTURE
摘要 In a diode matrix of a permanent memory (ROM) the word line and bit line system is formed by a system of strip-shaped zones of one conductivity type provided in the silicon body and in the another system is formed by polycrystalline silicon tracks of the opposite conductivity type provided on the surface and forming mono-poly p-n junctions with the strip-shaped zones. High packing density and high speed are obtained.
申请公布号 GB2009507(B) 申请公布日期 1982.03.24
申请号 GB19780045933 申请日期 1978.11.24
申请人 PHILIPS NV 发明人
分类号 G11C17/06;G11C17/16;H01L21/8229;H01L23/52;H01L27/10;H01L27/102;H01L29/04;(IPC1-7):01L27/10 主分类号 G11C17/06
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