| 摘要 |
PURPOSE:To increase the bonding strength of a bonding pad in a semiconductor device by forming uneven surface on the bonding pad formed via an insulating film on a semiconductor substrate. CONSTITUTION:A CVD SiO2 film 13 is formed via a thermally oxidized film 12 on an Si substrate 11, uneven shape is formed by etching on the surface, aluminum alloy is then deposited to form a bonding pad 14 having uneven shape on the surface, the peripheral edge of the pad 14 is covered with a passivation film 15, e.g., a PSG or the like, and a spherical part 17 formed at the end of a bonding wire 16 made of Au or the like is bonded. Since the surface is readily deformed if the bonding pad of aluminum alloy or the like is used and the oxidized film is damaged to expose the new surface in this manner, the bonding strength to the bonding wire can be sufficiently increased. |
