| 摘要 |
PURPOSE:To obtain a high-accuracy T<2>L by aligning the electrode leads of compound semiconductor elements to ensure even formation of a Schottky barrier simply by the replacement of individual electrodes under limited influence of parastic resistance. CONSTITUTION:A collector 62, bases 63 and 64, a collector connection layer 65 and emitters 71 and 72 and 73 and 74 within the bases 63 and 64 are formed electrically separated from each other on an SiO2 film 67 over an Si substrate 61. Simultaneously with collector and emitter electrodes, an window is etched through the collector 62 facing the bases 63 and 64 in such a manner as to include a part of the bases to attach metal electrodes thereto. The electrode 69 forms a Schottkey barrier on the collector 62. Therefore, the parastic resistance RD shows its minimum in the electrodes 73 and 74 while its maximum in the electrode 71. As compared with the previous art, this can reduce the parastic collector resistance between emitters thereby enabling marked curtailment of the input current while deep saturation between the bases and the collector with respect to the input voltage at a low potential level. |
