| 摘要 |
PURPOSE:To give a stabilized high breakdown strength to the device of monolithic structure by a method wherein a part of the base region, directly below the base electrode on the input side, is formed thinner and lower in density than the other base regions, and a punch-through is given to said part. CONSTITUTION:For example, a P base 3 is provided on the N type high resistance region (collector) 2 on an N<+> region 1 and a driving transistor (TR) and N<+> emitter regions 4 and 5, to be used for an output TR, are formed in the base region. A P type guard ring 11 and an N<+> channel stopper 12 are provided on the circumference of the base and a darlington circuit is formed by providing metal electrodes 7-10 at each TR. The base region 3 is formed in such manner that the section directrly below the electrode 7 will have a divided thin and narrow region 3a and a punch-through is performed at the voltage lower than the collector-emitter sustaining voltage of an output TR. Through these procedures, the device having a stabilized high breakdown strength can be formed with a simple process of manufacture. |
