| 摘要 |
PURPOSE:To increase the withstand voltage of a semiconductor switch by forming a field effect control electrode on the back surface. CONSTITUTION:Layers 4, 5 of the same conductive type as reversely conductive type layers 2, 3 and substrate 1 are formed on the main surface of a semiconductor single crystalline substrate 1. A field effect control electrode is formed on the back surface of a semiconductor single crystalline substrate 1. That is, insulating film 6 and polycrystalline silicon layer 7 are formed on the surface of the back crystal to form an MOS diode configuration formed of the substrate 1, the film 6 and the layer 7. A metallized layer is formed on the surface of the layer 7, is die bonded to a package 9 by a metallic solder 8 and is produced as the gate terminal of the MOS configuration. |
