| 摘要 |
PURPOSE:To enhance precision of an etching pattern by a method wherein an electron beam is irradiated on a wafer being formed with a resist film, and after developing treatment is performed, the surface thereof is washed with a high boiling point liquid, and after the high boiling point liquid is evaporated, ethcing is performed. CONSTITUTION:The resist film is formed on the Si wafer, and the electron beam is irradiated at the prescribed positions and developing treatment is performed. Then it is rinsed with the high boiling point liquid, and an inert gas of N2 gas, etc., is blown against the wafer in the atmosphere to make the high boiling point liquid to be evaporated. As the high boiling point liquid, normal propyl alcohol, isobutyl alcohol, pure water, etc., having boiling point of 90-120 deg.C is recommendable. Accordingly generation of drops of water during the developing and evaporating process of the resist film is prevented, and precision of etching pattern can be enhanced. |
