发明名称 PLANAR THIN FILM TRANSISTOR ARRAY AND METHOD OF PRODUCING SAME
摘要 <p>A planar thin film transistor is described wherein each element of the transistor structure is disposed in a planar relationship with respect to the next adjacent layer. The method of manufacture generally includes the steps of depositing one of the elemental members of a thin film transistor structure and filling in the valleys between the elemental structure with an insulating material to form a planar surface which, in turn, forms the surface upon which the next planar layer is formed.</p>
申请公布号 JPS5721867(A) 申请公布日期 1982.02.04
申请号 JP19810078792 申请日期 1981.05.26
申请人 XEROX CORP 发明人 MAIKURU POORUSHIYUTSUKU;JIYOSEFU JIEI UISOTSUKI
分类号 H01L29/78;G02F1/1343;G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/10;H01L27/12;H01L29/786 主分类号 H01L29/78
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