| 摘要 |
In a process for preparing a body of semiconductor material in which a slim rod (19) of semiconductor material in a chemical vapor deposition chamber (23) is maintained in contact with decomposable gaseous compounds containing semiconductor material at a temperature sufficient for decomposing the gaseous compounds whereby decomposition of the gaseous compounds occurs and semiconductor material is deposited on the slim rod to form an enlarged semiconductor body, a virgin slim rod (19) is pulled in a pulling chamber (9) from a molten semiconductor material source (17) using a seed crystal, the slim rod, maintained at a temperature sufficient for decomposing the said gaseous compounds, is passed continuously into the chemical vapor deposition chamber (23) through a communication passageway (21) between the pulling chamber and the deposition chamber, and the enlarged semiconductor body (33) is pulled continuously from the decomposttion chamber.
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