| 摘要 |
PURPOSE:To facilitate the formation work, by remaining a resist which is used as an etching mask for a metal film, forming an insulating film between wiring patterns by a lift off method, thereafter providing an upper layer wiring via the interlayer insulating film, and flattening a multi-layer wiring structure. CONSTITUTION:The metal film 12 of Al and the like is formed on the entire surface of a substrate 11. The metal film 12 is etched by using a resist pattern 13, and a first wiring layer 14 is formed. With said resist 13 being remained, the insulating film 15 is formed to the thickness which is the same as that of the wiring 14 by the sputtering method and the like. Thereafter, the resist 13 is removed, and the insulating film 15 on the resist is lifted off. After a first insulating layer (interlayer film) 18 has been formed, a metal film 19 is etched by using a resist 20, and a second wiring layer 21 is obtained. In this method, the difference in steps due to the wiring layer can be almost entirely removed, and the breaking of the upper wiring and the short circuit between the wiring can be prevented. By repeating the lift off method, the more number of layers can be provided. |
