| 摘要 |
PURPOSE:To manufacture an amorphous silicon film with favorable characteristics such as photoconductivity and doping efficiency by growing an amorphous silicon film on a substrate by plasma CVD, sputtering or other method and cooling the substrate in hydrogen plasma. CONSTITUTION:A vacuum vessel 1 is evacuated to about 10<-7> Torr, and a substrate 3 on a substrate holder 2 is heated to about 300 deg.C. Gaseous H2 is fed into the vessel 1 to regulate the internal pressure of the vessel to 10<-1>-10<-6> Torr. Silicon as an evaporation source 4 is evaporated by high frequency heating or other heating method. The evaporated silicon is ionized with an ionizing electrode 7 having DC or AC potential together with H2 to form a plasma state, and a hydrogenated amorphous silicon (a-Si) film is formed on the substrate 3. After completing the deposition of the a-Si film on the substrate 3, the heating of the source 4 is stopped, and while generating hydrogen plasma with the above-mentioned ionizing means in an H2 atmosphere under 10-10<-6> Torr, the substrate 3 is cooled to manufacture the desired a-Si film. |
