发明名称 FORMING METHOD FOR PHOTOCONDUCTIVE FILM
摘要 PURPOSE:To obtain a uniform and high quality photoconductive film by forming in advance a substance capable of diffusing metal forming a light transmissive electrode on the light transmissive electrode, heat treating it, removing the substance on the electrode and forming a photoconductive film. CONSTITUTION:A CdS is vacuum deposited at 100-300 deg.C of substrate temperature in 0.5mum on a glass substrate 2 having a transmissive electrode (In2O3)1 formed by vacuum deposition. Then, it is heated at 500 deg.C for 15min in vacuum of 10<-5>Torr. It is then etched with dilute aqueous hycrochloric acid solution, and the CdS is removed. After it is washed with water and is dried, the substrate 2 having the electrode 1 is set again in a vacuum container. Then, it is deposited with ZnS film 3 of 0.1mum at 100-300 deg.C of the substrate temperature in vacuum of less than 10<-5>Torr. Sequentially, a (CdxZn1-xTe)y(In2Te3)1-y film 4 is deposited in 3mum at the same temperature of the substrate. Thereafter, the substrate temperature is held at 450- 500 deg.C for 5-30min.
申请公布号 JPS575378(A) 申请公布日期 1982.01.12
申请号 JP19800079760 申请日期 1980.06.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKEDA ETSUYA;SADAMATSU KAZUMI;FUJIWARA SHINJI
分类号 H01J9/233;H01L31/0264;H01L31/032;H01L31/18;H01L51/42 主分类号 H01J9/233
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