| 摘要 |
PURPOSE:To enable the attainment of a condition of thoroughly squeezing currents by a method wherein a current squeezing P<+> region is formed in a semiconductor substrate by a diffusing method before being epitaxially grown. CONSTITUTION:The P<+> region 11 is formed on the semiconductor substrate made of N type InP 10 with an SiO2 film 18 as a mask. Then, an active layer 12 and a P type InP layer 13 of a cladding layer are formed. Then, a mesa-type active region is formed by etching after an SiO2 19 is formed in stripelike. Subsequently, an N- InP layer 14 of the cladding layer is grown and finally, a P type electrode and N type electrode are formed. |
