发明名称 Semiconductor switch
摘要 A semiconductor (preferably a thyristor) switch has characteristics that can be represented by an equivalent circuit including an interconnected pair of opposite conductive types of transistors. The base terminals of these transistors represent anode and cathode gate electrodes of the thyristors. An amplifier which is free from erroneous actions due to the impression of a transitional voltage is connected to an electrode of the thyristor, which corresponds to the base terminal of an equivalent transistor of a first conductive type, in order to supply a gate current. A resistor across the base-emitter junction of an equivalent transistor of a second conductive type has a sufficiently low-resistance value to satisfy a predetermined dv/dt-bearing capacity. Therefore, a sustaining gate current is provided responsive to an amplification of the input to the amplifying means.
申请公布号 US4302687(A) 申请公布日期 1981.11.24
申请号 US19790031131 申请日期 1979.04.18
申请人 NIPPON ELECTRIC CO., LTD. 发明人 YOSHINO, TETSUO;SAWANO, TSUYOTAKE;TAKEUCHI, TOKUO
分类号 H03K17/081;H03K17/725;(IPC1-7):H03K17/72 主分类号 H03K17/081
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