发明名称 FORMING OF MICROPATTERN
摘要 PURPOSE:To obtain a micropattern by forming the second resist film on a window of the first resist film through oblique vaporization and regulating the second window. CONSTITUTION:The second resist 3 is obliquely evaporized in an opening 10 of the first resist film having a thickness of approximately one micron. The thickness of the second regist is approximately 1,000 Angstrom thick. The regist 3 is also formed in the opening 10 so that a small hole 5 regulated by the resists 2 and 3. This small hole 5, if used for patterning the etching of a ground substrate, can form a micropattern.
申请公布号 JPS56137626(A) 申请公布日期 1981.10.27
申请号 JP19800040513 申请日期 1980.03.31
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 IWAMATSU SEIICHI
分类号 H01L21/027;G03F7/00;G03F7/20;(IPC1-7):01L21/30 主分类号 H01L21/027
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