| 摘要 |
PURPOSE:To reduce the complication of design and process accompanying the reduction of element area, by providing each of plural vertical signal lines with one charge storage part as a source which supplies self-biasing charge to the vertical signal lines. CONSTITUTION:In a horizontal retrace interval, a positive voltage is applied to terminal 201 to hold drains of an MOSFET group at constant potential VD. Next, when a large positive voltage is applied to terminal 204, drains in an MOSFET group arrayed from MOSFET 205 horizontally have deep voltage Vs and bias charge QB is injected into every other line group arrayed horizontally from column line 215 via every other horizontal MOSFET group arrayed from MOSFET 205 in the ON state. |
