摘要 |
Shaped silicon carbide ceramic articles of high density, e.g., at least 90 percent of theoretical, are produced by cold pressing and sintering boron-containing high purity, submicron beta silicon carbide powder. The silicon carbide powder is produced preferably by gas phase reaction of silicon halide, e.g., silicon tetrachloride, carbon source reactant, e.g., halogenated hydrocarbon, and boron source reactant, e.g., boron trichloride, with a hydrogen plasma.
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