发明名称 Process for manufacturing Si useful for semiconductor components from quartz sand
摘要 Relatively pure Si (having less than about 1 ppm of detrimental impurities therein) is obtained from ordinary quartz sand by uniformly admixing such sand with suitable glass-forming materials, such as boron oxide and alkali-metal carbonates or oxides, melting such admixture to form a glass, annealing the glass so as to obtain a phase separation comprised of an SiO2- rich phase and an impurity-rich phase, extracting the impurity-rich phase via strong acid, such as nitric acid, washing and drying the remaining glass and reducing such glass with carbon-containing compounds, such as graphite, sucrose, starch, etc., in an electric arc. The so-obtained relatively pure silicon is suitable for fabrication into semiconductor components, such as solar cells.
申请公布号 US4294811(A) 申请公布日期 1981.10.13
申请号 US19800194336 申请日期 1980.10.06
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 AULICH, HUBERT;GRABMAIER, JOSEF
分类号 C01B33/02;C01B33/025;C03B20/00;C03C3/06;H01L21/02;H01L21/208;H01L31/04;(IPC1-7):C01B33/02 主分类号 C01B33/02
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