发明名称 FILM FORMING METHOD
摘要 PURPOSE:To form a film of uniform physical properties and thickness with good reproducibility by forming a depositing chamber with double-ply pipes consisting of two cylindrical members and introducing a film-forming gas through the gas lead-in pipe disposed spirally on the inside pipe. CONSTITUTION:A depositing device 100 is made into the coaxial cylindrical type formed with a depositing chamber 103 in the space between an inside pipe 101 and an outside pipe 102. A gas lead-in pipe 105 is spirally disposed around the inside pipe 100. A prescribed kind of gas is blown out through the gas blow holes 110 opened in the surface of this pipe 105. When prescribed pressure is developed in the chamber 103, an electric field is formed across electrodes 103 and 107, whereby glow discharge is caused in the chamber 103 to form a plasma atmosphere and the depositing film of prescribed thickness is formed on the surface of a substrate 108. The substrate 108 is beforehand installed on the inside wall surface side of the outside pipe 102 or the outside wall surface side of the inside pipe 101. The rate of film growth is increased by this method.
申请公布号 JPS56121630(A) 申请公布日期 1981.09.24
申请号 JP19800025876 申请日期 1980.02.29
申请人 CANON KK 发明人 INOUE HIDEKAZU;SHIMIZU ISAMU;OGAWA KIYOUSUKE
分类号 C01B33/04;B01J19/08;C23C16/50;C23C16/52;C30B25/02;G03G5/08;H01J37/32;H01L21/205 主分类号 C01B33/04
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