发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To make it possible to connect each other by change of only one mask for wiring formation, shorten the development period and lower costs, by aligning in the identical direction the input/output lines to the devices on the substrate, covering them with insulating film and forming connecting windows at a fixed interval in the crossing direction with the lines. CONSTITUTION:A row of connecting openings 5101..., 5201... are preliminerily formed on the insulating film at a fixed interval and at a right angle to the alignments of the diffusion wiring layer 4 which is to be the input/output lines of a unit circuit 1. The interval with the adjacent row is so wide that two parallel lines of metal wiring can be mounted thereto. By means of a mask a metal wiring 6 is formed in the lateral direction. Any wirings can be made possible only by exchanging the mask. And because the positions of the connecting openings can be determined preliminerily for a master chip, the width of the wiring layer can be determined by only enlarging the connecting openings part, so that the parasitic volume decreases, resulting in the higher speed operations.
申请公布号 JPS56118350(A) 申请公布日期 1981.09.17
申请号 JP19800020755 申请日期 1980.02.21
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 KOIKE MITSUHIRO
分类号 H01L21/822;H01L21/82;H01L23/538;H01L27/04;H01L27/118 主分类号 H01L21/822
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