发明名称 METHOD FOR GROWING SINGLE CRYSTAL FROM MOLTEN LIQUID
摘要 <p>A method of preparing a single crystal by the solidification of a molten liquid and by crystal growth, wherein a crucible having a double structure consisting of an inner cylinder and an outer cylinder is used, and after the starting material is placed in the inner cylinder and the outer cylinder is sealed, the starting material is heated and molten to cause crystal growth. According to the present invention, the starting material can be sealed and crystallized even at a high temperature.</p>
申请公布号 WO1988010329(P1) 申请公布日期 1988.12.29
申请号 JP1988000572 申请日期 1988.06.14
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