| 摘要 |
<p>PURPOSE:To detect the defects of a brazing section by a method wherein the brazing section is immersed in a surface active solution into which radioactive isotopes are dissolved, and the quantity of isotopes which infiltrate into is measured. CONSTITUTION:I131 is dissolved into an active surface solution of a CF4 or CF group having strong infiltrativity the solution is heated at 50-80 deg.C, and an Si wafer brazed to a metallic supporting plate is immersed into the solution for about ten min. The solution is made to infiltrate into defects sufficiently. The wafer is extracted, washed with alcohol, heated and dried, a liquid flowing out from the brazed defects is counted by means of a scintillation counter tube, and the dimensions of the defects are clarified by the measured values. Thus, the results of brazing can be evaluated in a short time.</p> |
