| 摘要 |
<p>PURPOSE:To obtain an infrared ray emitting element having high efficiency, high light output and stable electric characteristics by setting the carrier density of an n type GaAlAs layer making contact with a p type GaAlAs metal compound semiconductor layer as a dopant at 6X10<16>-1X10<18>atom.cm<-3>. CONSTITUTION:The light emitting diode is formed by forming a p type GaAlAs layer 2 and an n type GaAlAs layer 3 by a liquid phase epitaxial growth on a p type GaAlAs substrate 1 and then forming an n<+> type contact part 4 and a p<+> type contact part 5 thereat. When the layer 3 is formed, the absolute difference value ¦ND-NA¦ between the carrier density and hence the doner density and the acceptor density as a dopant is set in the range from 6X10<16> to 1X10<18>atom.cm<-3>. The dopant may include impurity elements such as Sn, Te, Se, Si or the like.</p> |
