| 发明名称 |
Planar indium antimonide diode array and method of manufacture |
| 摘要 |
An improved diode array and method of manufacture is provided by the diffusion of cadmium from an indium-cadmium alloy through a silicon diode mask into bulk indium-antimonide to form a planar structure.
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| 申请公布号 |
US4286277(A) |
申请公布日期 |
1981.08.25 |
| 申请号 |
US19770854435 |
申请日期 |
1977.11.22 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
LONGSHORE, RANDOLPH E. |
| 分类号 |
H01L21/383;H01L21/465;H01L31/0304;H01L31/103;H01L31/18;(IPC1-7):H01L27/14 |
主分类号 |
H01L21/383 |
| 代理机构 |
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