| 摘要 |
A vertical MOSFET e.g a VDMOS device 50 includes source and gate electrodes 32, 52 on a major semiconductor surface, and a drain electrode 30 on an opposing semiconductor surface. A shield electrode 56 is disposed in proximity to the gate electrode 52 so as to minimize feedback capacitance between the gate electrode and drain region 24,26. Additionally, the shield electrode 56 increases the level of space charge limited current that can be supported in the drain region, and minimizes current crowding in the device. <IMAGE> |
