| 摘要 |
PURPOSE:To enable to obtain the semiconductor element having a low contact resistance by a method wherein the semiconductor substrate is processed with oxygen plasma just before the electrode is to be adhered. CONSTITUTION:After an Si wafer 1 being completed with a functional region 2 and a surface electrode 4 is treated with acid, chemical, etc., it is exposed to the oxygen plasma as shown with arrow marks. Then the back face is metalized and Ti5, Ni6 and Au7, for example, are adhered on the back face of the wafer 1 in order. By this performance of the oxygen plasma process like this, organic matters adhered on the back face of the wafer 1 are oxidized, and are removed from the face of wafer converting into gas. Accordingly the impurity in the interface between the wafer 1 and the metal is removed, and the semiconductor element having the low contact resistance can be obtained. |
