| 摘要 |
PURPOSE:To obtain an arbitrary resistor up to low resistance value from high resistance value easily by a method wherein a special mask is not used, a pattern shape is simply changed and ions are injected. CONSTITUTION:A plurality of thick field oxide films 12 are formed on a P type semiconductor substrate 10, thin gate oxide films 14 are coated on the substrate 10 exposing among the oxide films 12, and the sections of the substrate 10 located among the films 12 are each used as enhancement and depletion transistors E, D and a resistor R. B ions shown in + marks are injected to the whole surface in order to control the threshold value voltage of the element E, the whole surface is covered with a resist film 16a, openings 16 are bored to regions corresponding to the element D, and P ions are injected which are shown in - marks for controlling the drain currents of the element D. The films 16 are remolded into a film 18, openings 14a, 14b, 18a are made up corresponding to the elements E, D, R, P ions are injected again, and a resistor 60 having the desired resistance value is formed in a region of the resistor R. |
