| 摘要 |
PURPOSE:To obtain a static induction type reverse conductivity type thyristor having low ON voltage while simplifying the configuration by forming a diode for surrounding the thyristor in a semicouductor substrate when forming the thyristor on the substrate. CONSTITUTION:An n<+> type layer 11 is formed on the back surface of n type or i type Si substrate 10, a p<+> type region 12 is diffused therein, an n<+> type region 13 is formed on the surface of the substrate 10, and a ring-shaped p<+> type region 14 is diffused in the region confronting the region 12 and surrounding it. Similarly, a ring-shaped p<+> type region 15 is formed without confronting the region 12 at the peripheral edge of the surface of the substrate 10, the regions 15, 13 are connected, a common terminal 2' is mounted thereon, a control terminal 3' is mounted on the region 14, and a common terminal 1' is mounted on the region 12 with the layer 11. Thus, a diode region 31 having p<+>-n(i)-n<+> architecture is formed from the surface, and thyristor 33 having p<+>-n<+>-n(i)-n<+> and p<+> architectures is formed from the back surface through the isolation band 32. |
