| 摘要 |
PURPOSE:To control excessive etchings within the limit of not interfering with practical application by a method wherein ion beams are irradiated to form a conductor pattern with a holder being rotated, at an angle of incidence of the order of 25-45 deg. with respect to the perpendicularity to a bubble medium substrate surface. CONSTITUTION:An axis A perpendicular to the surface of the substrate 1 of the porcelain bubble medium is inclined by an angle theta in the direction B in which the ion beams inside. When the substrate 1 is rotated by means of the holder 14 within its surface area while the beams being irradiated, the ions are smoothly irradiated to the corners formed by the conductor pattern 4 and the spacer layer 3 and the etching is uniformly applied. In this case, the spacer layer 3 is preferred to be irradiated so as to be applied with somewhat excessive etching, in order to correctly form an outline of the pattern 4 and moremover, to completely remove unnecessary part of the conductor layer. With the selection of theta in the order of 25-45 deg., the excessive etchings can be controlled within the limit of not interfering with practical application. |
