| 摘要 |
PURPOSE:To prevent the occurrence of disconnection and crazing in a metal film depositing apparatus through sputtering, by installing a high-frequency coil between substrates and an evaporating source vessel and evaporating a metal onto the substrates through the high-frequency ionization space. CONSTITUTION:In an apparatus of opposedly disposing substrates 7 and a vessel 9 containing an evaporating source 8 of the metal to be deposited on the substrate 7 in a vapor deposition chamber 4, admitting a gas for sputtering gas into the chamber 4, and applying high voltage between the substrate 7 and the vessel 9 to cause electric discharge thereby depositing the metal on the substrate 9 surfaces, a high- frequency coil 12 is installed between the substrate 7 and the vessel 9, and the metal 8 from the vessel 9 is deposited on the substrate 7 surface through the high- frequency ionization space generated by the coil 12. In this way, the metal ions evaporated on the surface of the substrates 7 such as semiconductors is prevented from having directivity and the occurrence of disconnection and crazing of metal wires for wiring is prevented. |
