| 摘要 |
PURPOSE:To increase the adhesive force of an Si3N4 film and prevent the intrusion of oxygen by fitting the Si3N4 film 500A or less thick on to the light-taking surface of the luminous element and further providing the transmitting film or reflecting film of Al2O3 or SiO2 having a prescribed thickness thereon. CONSTITUTION:When the protective film for the luminous element of the semiconductor laser and the like is formed, first the Si3N4 film 500A or less thick is fitted and then the film is coated with the Al2O3 or SiO2 film having a prescribed thickness. To be concrete, in the case when the combination of Si3N4 film with SiO2 film is adopted, Si is used as a target and the spattering is made thereon first in N2 gas and then in the mixture gas wherein N2 and An are mixed in the ratio of 1 to 1, and thus the Si3N4 film of 500A or more and SiO2 film of 3,000Angstrom are laminated continuously. In the case when the combination of Si3N4 layer with Al2O3 film is adopted, Si is replaced by Al and N2 by O2 and they are formed in the same thickness. In this way, the intrusion of O2 into the interface between the surface of the element and Si3N4 film is prevented. |
