| 摘要 |
<p>PURPOSE:To obtain a green LED with high brightness by a method wherein C is used as P type impurities of GaP and C is added from the gaseous phase when a liquid phase grows. CONSTITUTION:An N type GaP wafer 10 is coated with a liquid-phase growing layer 10', the layer 10' is slowly cooled, and a liquid phase is grown. When the layer 10' is slowly cooled up to 970 deg.C in H2, quartz is reduced, and added into Si and Ga, and the first N epitaxial layer is grown. H2 is changed into Ar, NH3 and CH4 are added, the whole is kept at a fixed temperature, and N and C are added into Ga. A P type second epitaxial layer to which N and C are added is further formed by means of slow cooling. Si in Ga is reacted with N and removed at that time. Zn is added from the gaseous phase, and a P type third epitaxial layer is stacked. When the concentration of CH4 is controlled in case of the formation of the second epitaxial layer, an acceptor is easily controlled, and a green LED having high brightness and high efficiency is obtained.</p> |
