| 摘要 |
PURPOSE:To flatten the surface of the electrode wiring layer, by forming an insulation layer having an electrode contacting window on a semiconductor substrate, depositing a metal layer on all the surface, performing ion etching with the substrate being rotated, and remaining the metal layer only in the window. CONSTITUTION:The first insulating film 2 is deposited on the semiconductor substrate 1, the electrode contacting window is provided, and the first metal electrode wiring layer 3 is deposited on all the surface including said window. Then, the ion beam is irradiated from the oblique direction with the substrate 1 being rotated, and the layer 3 is etched. The layer 3 is remained only in the part of the contact window, and the other part of the layer 3 is removed. Then, the second insulating film 4 is deposited on all the surface, a resist mask 5 having an opening hole is provided on the region corresponding to the layer 3, and an electrode contacting window 4A is provided by etching. Thereafter the second metal electrode wiring layer 6 is deposited on all the surface, the same etching is performed, the layer 6 is remained only on the layer 3, the third electrode wiring 7 is formed, so that it is contacted with the layer 6, extended over the film 4, and contacted with the layer 3 via the layer 6. |
