| 摘要 |
PURPOSE:To obtain a transfer mask which is able to form extra fine patterns by an X-ray exposure method by forming the outermost layer by an inorganic compound layer, and laminating inorganic compound layers and organic compound layers into three or more layers. CONSTITUTION:Part of the layer 2 out of the silicon nitride layers 2, 2' provided to both sides of a silicon substrate 1 is removed, after which a polyimide layer 3 and a silicon oxide layer 4 are formed on the layer 2'. Next, an absorption layer comprising X-ray absorption transfer patterns 5 and mask alignment patterns 6 are formed on the layer 4, thence these are beforehand etched and with the silicon nitride layer 2 as a mask, the silicon substrate 1 is etched, whereby the transfer mask supported by transmission layer supporting beams 7 is produced. |
