| 摘要 |
PURPOSE:To perform highly precise etching by irradiating an infrared ray on a semiconductor material, detecting the transmitted light energy, converting the progressive displacement of the etching into the quantitative electric signal, and performing control. CONSTITUTION:The light of an infrared ray lamp 6 is irradiated on an Si substrate 2 immersed in an etching liquid 4 via a lens 8. The transmissivity linearly increases with time, and the light reaches a photoelectric conversion element 9 via a lens 10. The element 9 converts the displacement amount of the light energy into an electric signal. The signal is amplified 12, compared 13 with an established value. A control signal is sent out 14, the etching is finished, and the substrate is sent to the washing process. In the case the etching is performed in this constitution, the uniform and high quality semiconductor device can be obtained. |
