| 摘要 |
PURPOSE:To obtain a double-terminal thyristor of high performance by a method wherein the blocking capability of the diode part forming the thyristor is made higher than the break-over voltage of the thyristor part and a separating region blocking the bypass current is provided between these parts. CONSTITUTION:The n type separating region 43' reaching in height half of a p type semiconductor substrate 41 is formed diffusely in the central part of the back surface of the substrate 41, while an n type emitter layer 43 is provided on the side of the region 43' of one substrate 41 to be the part of thyristor. Next, on the surface of the other substrate 41 an n type layer 42' of the part of diode is formed diffusively, while on the surface of one substrate 41 facing the layer 43 an n type base layer 42 is formed diffusively, and this is coupled to the layer 42'. After that, a p type emitter region 44 is provided in the layer 42, and on the region 43' a mesa groove 45 piercing through the layers 42 and 42' is formed, while in the side of the substrate 41 a mesa hole 47 is formed. In this constitution, by such a method as enlarging the depth of the PN reverse junction 47 generated in the layer 42' and the substrate 41, the blocking capability in this part is made higher than the blocking capability of the p-n normal junction 49 generated in the layer 42 and the region 44. |
