| 摘要 |
PURPOSE:To form simultaneously a number of diodes in balance with equivalent properties between two junctions by converting two conventional chips into one chip when forming a dual beam diode. CONSTITUTION:An N type epitaxial layer 7 is formed on one main surface of an N<+> type Si substrate 6, ions are implanted on a part of the surface of the layer 7 to thereby form a P type well 8, an N<+> type diffused layer 9 is formed on a part of the surface of the well, a P<+> type diffused layer 10 is formed on the surface of the other portion of the N type epitaxial layer, a first electrode 1 is formed in connection ohmically to the layer 9, a second electrode 2 is formed in connection ohmically to the layer 10, a P<+> type diffused contact portion 11 and an N<+> type diffused contact portion 12 are formed on the surface of the boundary between the well 8 and the layer 7, thereby forming a common third electrode 3 for shorting the contacts. |
