发明名称 Pressure transducer strain gauge measurement bridge connections - are doped semiconducting tracks with additional ion implantations
摘要 <p>A measurement arrangement, pref. of semiconducting material, for a pressure transducer has strain gauges in the form of resistive paths (3,3') on a membrane (1) and connected into a full bridge circuit by connector tracks (5,6,7,8). It is improved to reduce the effect of the connecting tracks on the output signal. Two identical resistive tracks (3,3') are parallel symmetrical about a membrane dia., and joined at each end by curved sections (4,4'). The connecting tracks join the resistive paths at points where radial membrane stresses change sign. The connecting tracks consist of doped semiconducting material with an additional implantation of ions. The doping conc. in the conducting track regions is at least 10 to the power of 20 per cubic cm.</p>
申请公布号 DE2945359(A1) 申请公布日期 1981.05.14
申请号 DE19792945359 申请日期 1979.11.09
申请人 SIEMENS AG 发明人 POPPINGER,DIPL.-PHYS.DR.,MANFRED
分类号 G01L9/04;G01L9/00;H01L29/84;(IPC1-7):01C9/04 主分类号 G01L9/04
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