| 摘要 |
PURPOSE:To expand uses of the laser apparatus in such a way that one apparatus can be used for lasers in a range of point laser to large output laser by changing a spot size of oscillated light with adjustment of an outer magnetic field, and a transverse mode of oscillations can be controlled in the outer magnetic field. CONSTITUTION:A P-AlxGa1-xAs layer 12, the first layer, is formed and further, an N-AlyGa1-yAs active layer 13 and N-AlzGa1-zAs layer 14, the third layer, are formed in succession on a P-GaAs substrate 11. The active layer 13 is formed of a double heterostructure which is formed by putting the layer 13 between the layers 14 and 12; P type impurities of Zn and the like are selectively diffused in such a manner as excluding an electrode 17 to which currents are injected from the surface of the layer 14, and two P-N junctions 15 are formed in the layer 14. The P-N junctions exposed on the surface of the layer 14 are covered with an insulating film 16, an N type electrode 17 is formed on the surface of the layer 14 in stripe pattern, an electrodes 18 to be applied reverse biases are formed in the region where P type impurities of the layer 14 are diffused, while the electrodes 18 respectively are applied reverse biases, and the transverse mode of oscillations is controlled by the outer magnetic field. |
