| 摘要 |
<p>Longitudinal mode control, thereby providing more useful devices, is achieved in a heterojunction semiconductor laser (201-208) by doping the active region (203) of the laser with a deep level electron or hole trap. The trap is chosen to have a carrier capture cross section (Alpha)o and an optical cross section (Alpha)o such that the ratio of P, the average number of photons per cubic centimetre, to Ps is between 0.1 and 100 where Ps is equal to (N (Alpha)eV(Alpha)oCo), N is the carrier density, V is the carrier thermal velocity, and Co is the speed of light in the material. In a specific embodiment the active region is bombarded by photons to achieve deep level electron traps in the active region. </p> |
