发明名称 THIN FILM FOR HYDROGEN OCCLUSION ALLOY
摘要 PURPOSE:To form a thin film of hydrogen occlusion alloy free from cracking even if subjected to hydrogen occluding and releasing reactions, by adding metals having superior ductility and malleability to a hydrogen occlusion alloy. CONSTITUTION:Sputtering is carried out by using a material prepared by uni formly mixing a hydrogen occlusion alloy with metals having superior ductility and malleability as a target, by which a thin film of the hydrogen occlusion alloy to which the above metals are added is formed. As the above metals, gold, silver, copper, etc., are suitably used. Further, as the above hydrogen occlusion alloy, rare earth-nickel-base alloys, titanium-base alloys, magnesium- nickel-base alloys, etc., can be used. In the resulting thin film, cracking attendant upon thermal expansion and shrinkage can be prevented at the time of hydrogen occluding and releasing reactions. Accordingly, the above thin film can be suit ably used for a hydrogen gas purifier.
申请公布号 JPS6475640(A) 申请公布日期 1989.03.22
申请号 JP19870232044 申请日期 1987.09.18
申请人 SANYO ELECTRIC CO LTD 发明人 FURUKAWA AKIO;HONDA NAOJIRO;YONEZAKI TAKAHIRO
分类号 C01B3/00;C22C14/00;C22C19/00;C22C19/03;C22C23/00;C23C14/14 主分类号 C01B3/00
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