| 摘要 |
PURPOSE:To speedily and efficiently grow the semiconductor thin film on a substrate by a method wherein the substrate is placed in a gas containing the semiconductor substance and the laser beam, having a wavelength tuned with the gas absorbing band, is irradiated on the substrate. CONSTITUTION:The substrate 8 is held horizontally 6 in a reaction chamber 2, residual gas is discharged and SiH4 gas is brought in and pressure is adjusted 4. The substrate 8 is opposed to the laser beam passing window 2a by manipulating a handle 7 and observation of the movement of the substrate 8 is done through a window 2b. Then CO2 laser beam L, having a wavelength of 10.59mum which coincides with the absorbing band of the SiH4, is irradiated from a mirror 3a, an atmosphere is selectively excited, an inducing efficiency of desired reaction increases and an Si thin film can be grown on the substrate 8. Also the crystallizing condition of the Si can be controlled finely by adjusting the temperature of the substrate 8. |
