发明名称 METHOD OF MANUFACTURING HIGH-PURITY SILICON RODS HAVING A UNIFORM SECTIONAL SHAPE
摘要 <p>TITLE OF INVENTION METHOD OF MANUFACTURING HIGH-PURITY SILICON RODS HAVING A UNIFORM SECTIONAL SHAPE A method of manufacturing high-purity silicon rods having a uniform sectional shape by thermally decomposing monosilane on a plurality of rod-shaped silicon carrier members which have been red-heated by directly passing an electric current therethrough, said silicon carrier members being thermally insulated from one another, characterized in that monosilane is supplied into a pyrolysis container through multi-stage monosilane supply ports located in parallel with the axes of said silicon carrier members held vertically within the pyrolysis container, and that the amount of supply of monosilane through the upper supply ports is increased as compared with that through the lower supply ports in response to the increase of the diameter of each of said silicon rods.</p>
申请公布号 CA1098011(A) 申请公布日期 1981.03.24
申请号 CA19780298321 申请日期 1978.03.02
申请人 KABUSHIKI KAISHA KOMATSU SEISAKUSHO 发明人 YATSURUGI, YOSHIFUMI;YUSA, ATSUSHI;TAKAHASHI, NAGAO
分类号 C01B33/02;C01B33/029;C01B33/035;C23C16/22;C23C16/24;C23C16/44;C23C16/455;C30B29/06;(IPC1-7):01B33/02;01J17/32 主分类号 C01B33/02
代理机构 代理人
主权项
地址