| 摘要 |
PURPOSE:To prevent a leakage current or a deterioration of withstand voltage by a method wherein an insulating film having negative charges of specific value is formed on a p type diffused layer of a semiconductor substrate through an insulating film, and an insulating film having positive charges of specific values on an n type diffused layer through an insulating film. CONSTITUTION:After an element region such as p<+> region 8, 5, n<+> type region 11 and 12 are formed on a n type semiconductor substrate, for instance a low charge insulating film such as silicon oxide 6, boron additive glass film 7, phosphorus additive glass film 9 (that charge is -1X10<11>/cm<2> or above and -1X10<11>/cm<2> or below) are formed on the surface. Further, an insulating film having negative charges of -1X10<11>/cm<2> or less such as aluminum film 14 are formed on p<+> type regions 8 and 5, an insulating film having positive charge +1X10<11>/cm<2> such as nitrogen silicon film on an n type region 3 and n<+> type regions 11 and 12. In this way, the forming of reflective layer on the p type region and the n type region can be prevented, further the deterioration of element facility accompanying the leakage flow or the deterioration of withstand voltage can be prevented. |
